FFSB3065B-F085, 650V SIngle 73A 1.38V@30A TO-263 Schottky BarrIer DIodes (SBD)
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см. техническую документацию
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Описание
Wide Bandgap EliteSiC (Silicon Carbide) Devices
onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices incorporate a technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices incorporate a technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Технические параметры
Brand: | onsemi |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 800 |
If - Forward Current: | 30 A |
Ifsm - Forward Surge Current: | 120 A |
Ir - Reverse Current: | 40 uA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Pd - Power Dissipation: | 246 W |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Silicon Carbide Diodes |
Qualification: | AEC-Q101 |
Subcategory: | Diodes & Rectifiers |
Technology: | SiC |
Vf - Forward Voltage: | 1.38 V |
Vr - Reverse Voltage: | 650 V |
Vrrm - Repetitive Reverse Voltage: | 650 V |
Вес, г | 1.71 |
Техническая документация
Datasheet
pdf, 337 КБ