DMP34M4SPS-13, 30V 135A 1.5W 3.8mOhm@20A,10V P Channel PowerDI5060-8 MOSFETs
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см. техническую документацию
см. техническую документацию
1 410 ֏
от 10 шт. —
930 ֏
от 30 шт. —
790 ֏
от 100 шт. —
670 ֏
1 шт.
на сумму 1 410 ֏
Описание
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.
Технические параметры
Channel Mode | Enhancement |
Channel Type | P |
Forward Diode Voltage | 1.2V |
Maximum Continuous Drain Current | 21 A |
Maximum Drain Source Resistance | 6 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | ±25 V |
Maximum Gate Threshold Voltage | 2.6V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 3 W |
Minimum Gate Threshold Voltage | 1.6V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | PowerDI5060-8 |
Pin Count | 8 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 127 nC @ 10V |
Width | 5.1mm |
Вес, г | 0.41 |
Техническая документация
Datasheet
pdf, 466 КБ