FCPF850N80Z, 800V 6A 850mOhm@3A,10V 28.4W null TO-220F-3 MOSFETs
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см. техническую документацию
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3 740 ֏
от 10 шт. —
2 820 ֏
от 50 шт. —
2 620 ֏
от 100 шт. —
2 530 ֏
1 шт.
на сумму 3 740 ֏
Описание
SuperFET® II Power MOSFETs
onsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.
onsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 4.5 ns |
| Id - Continuous Drain Current: | 6 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 28.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 850 mOhms |
| Rise Time: | 10 ns |
| Series: | FCPF850N80Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET II |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Вес, г | 2.67 |
Техническая документация
Datasheet
pdf, 689 КБ