DMN2041UVT-7, 20V 5.8A 28mOhm@8.2A,4.5V 2 N-Channel TSOT-23 MOSFETs
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
251 ֏
Кратность заказа 5 шт.
от 50 шт. —
194 ֏
5 шт.
на сумму 1 255 ֏
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Channel Type | N Channel |
| Drain Source On State Resistance N Channel | 0.017Ом |
| Drain Source On State Resistance P Channel | 0.017Ом |
| Power Dissipation N Channel | 1.1Вт |
| Power Dissipation P Channel | 1.1Вт |
| Квалификация | - |
| Количество Выводов | 6вывод(-ов) |
| Линейка Продукции | - |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 4.5В |
| Напряжение Истока-стока Vds | 20В |
| Напряжение Истока-стока Vds, N Канал | 20В |
| Напряжение Истока-стока Vds, P Канал | 20В |
| Непрерывный Ток Стока | 5.8А |
| Непрерывный Ток Стока, N Канал | 5.8А |
| Непрерывный Ток Стока, P Канал | 5.8А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 900мВ |
| Рассеиваемая Мощность | 1.1Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.017Ом |
| Стиль Корпуса Транзистора | TSOT-26 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 17 ns |
| Id - Continuous Drain Current: | 5.8 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | TSOT-26-6 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 1.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9.1 nC |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Rise Time: | 21 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 32 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 434 КБ