DMT12H007LPS-13, 120V 90A 2.9W 7.8mOhm@30A,10V N Channel PowerDI5060-8 MOSFETs
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2 120 ֏
от 10 шт. —
1 630 ֏
1 шт.
на сумму 2 120 ֏
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.006Ом |
| Power Dissipation | 2.9Вт |
| Количество Выводов | 8вывод(-ов) |
| Максимальная Рабочая Температура | 150 C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 120В |
| Непрерывный Ток Стока | 90А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 2.5В |
| Рассеиваемая Мощность | 2.9Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.006Ом |
| Стиль Корпуса Транзистора | PowerDI5060 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 19.1 ns |
| Id - Continuous Drain Current: | 90 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerDI5060-8 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 49 nC |
| Rds On - Drain-Source Resistance: | 7.8 mOhms |
| Rise Time: | 15.4 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 7.9 ns |
| Vds - Drain-Source Breakdown Voltage: | 120 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.31 |