DMC3071LVT-7, SOT-26 MOSFETs
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см. техническую документацию
см. техническую документацию
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Описание
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4.6 A, 3.3 A |
| Maximum Drain Source Resistance | 140(PChannel)mΩ, 90(NChannel)mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | ±20 V, ±20 V |
| Maximum Gate Threshold Voltage | 2.5(NChannel)V, 2.5(PChannel)V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.1 W |
| Minimum Gate Threshold Voltage | 1(NChannel)V, 1(PChannel)V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | TSOT-26 |
| Pin Count | 6 |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V(NChannel), 6.5 nC @ 10 V(PChannel) |
| Width | 1.7mm |
| Вес, г | 0.04 |
Техническая документация
Datasheet
pdf, 548 КБ