DMP2003UPS-13, PowerDI5060-8 MOSFETs
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2 250 ֏
от 10 шт. —
1 720 ֏
1 шт.
на сумму 2 250 ֏
Описание
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.
Технические параметры
| Channel Type | P Channel |
| Drain Source On State Resistance | 0.0017Ом |
| Power Dissipation | 1.4Вт |
| Количество Выводов | 8вывод(-ов) |
| Максимальная Рабочая Температура | 150 C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 20В |
| Непрерывный Ток Стока | 150А |
| Полярность Транзистора | P Канал |
| Пороговое Напряжение Vgs | 1.4мВ |
| Рассеиваемая Мощность | 1.4Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0017Ом |
| Стиль Корпуса Транзистора | PowerDI 5060 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.1V |
| Maximum Continuous Drain Current | 150 A |
| Maximum Drain Source Resistance | 4 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | ±12 V |
| Maximum Gate Threshold Voltage | 1.4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 80 W |
| Minimum Gate Threshold Voltage | 0.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerDI5060-8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 177 nC @ 10V |
| Width | 5.1mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 189 ns |
| Id - Continuous Drain Current: | 150 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerDI5060-8 |
| Pd - Power Dissipation: | 80 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 177 nC |
| Rds On - Drain-Source Resistance: | 1.7 mOhms |
| Rise Time: | 4.9 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 377 ns |
| Typical Turn-On Delay Time: | 7.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Вес, г | 0.19 |
Техническая документация
Datasheet
pdf, 520 КБ
Datasheet DMP2003UPS-13
pdf, 597 КБ