DMT10H025SK3-13, TO-252(DPAK) MOSFETs
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см. техническую документацию
см. техническую документацию
930 ֏
от 10 шт. —
580 ֏
от 30 шт. —
454 ֏
от 100 шт. —
380 ֏
1 шт.
на сумму 930 ֏
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 13.7 ns |
Id - Continuous Drain Current: | 7.4 A |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 12.9 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 21.4 nC |
Rds On - Drain-Source Resistance: | 23 mOhms |
Rise Time: | 11.2 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 27.5 ns |
Typical Turn-On Delay Time: | 8.2 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.54 |
Техническая документация
Datasheet
pdf, 430 КБ