DMT10H025SK3-13, TO-252(DPAK) MOSFETs

DMT10H025SK3-13, TO-252(DPAK) MOSFETs
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см. техническую документацию
930 ֏
от 10 шт.580 ֏
от 30 шт.454 ֏
от 100 шт.380 ֏
1 шт. на сумму 930 ֏
Номенклатурный номер: 8025172525
Бренд: DIODES INC.

Описание

Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 13.7 ns
Id - Continuous Drain Current: 7.4 A
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TO-252-3
Pd - Power Dissipation: 12.9 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 21.4 nC
Rds On - Drain-Source Resistance: 23 mOhms
Rise Time: 11.2 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 27.5 ns
Typical Turn-On Delay Time: 8.2 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Вес, г 0.54

Техническая документация

Datasheet
pdf, 430 КБ