DMN1054UCB4-7, 8V 2.7A 42mOhm@1A,4.5V 740mW null X1-WLB0808-4 MOSFETs
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1 020 ֏
от 10 шт. —
660 ֏
от 30 шт. —
540 ֏
от 100 шт. —
454 ֏
1 шт.
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Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | X1-WLB0808-4 |
| Pd - Power Dissipation: | 1.34 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Rise Time: | 6.7 ns |
| Series: | DMN1054 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 16.6 ns |
| Typical Turn-On Delay Time: | 5.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Vgs - Gate-Source Voltage: | -5 V, +5 V |
| Vgs th - Gate-Source Threshold Voltage: | 350 mV |
| Вес, г | 0.04 |
Техническая документация
Datasheet
pdf, 344 КБ