FFSB3065B, 650V SIngle 1.38V@30A 73A TO-263 Schottky BarrIer DIodes (SBD)
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см. техническую документацию
см. техническую документацию
8 100 ֏
1 шт.
на сумму 8 100 ֏
Описание
650V EliteSiC (Silicon Carbide) Schottky Diodes
onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.
onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.
Технические параметры
| Brand: | onsemi |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| If - Forward Current: | 30 A |
| Ifsm - Forward Surge Current: | 120 A |
| Ir - Reverse Current: | 40 uA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-2 |
| Product Category: | Schottky Diodes & Rectifiers |
| Product Type: | Schottky Diodes & Rectifiers |
| Product: | Schottky Silicon Carbide Diodes |
| Subcategory: | Diodes & Rectifiers |
| Technology: | SiC |
| Vf - Forward Voltage: | 1.7 V |
| Vrrm - Repetitive Reverse Voltage: | 650 V |
| Вес, г | 0.5 |
Техническая документация
Datasheet
pdf, 426 КБ