FDN339AN, Транзистор N-MOSFET, полевой, logic level, 20В, 3А, 500мВт
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660 ֏
от 10 шт. —
401 ֏
1 шт.
на сумму 660 ֏
Описание
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 3 A |
Maximum Drain Source Resistance | 35 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -8 V, +8 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 500 mW |
Minimum Gate Threshold Voltage | 0.4V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Series | PowerTrench |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 7 nC @ 4.5 V |
Width | 1.4mm |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 10 ns |
Forward Transconductance - Min: | 11 S |
Id - Continuous Drain Current: | 3 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SSOT-3 |
Part # Aliases: | FDN339AN_NL |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Qg - Gate Charge: | 10 nC |
Rds On - Drain-Source Resistance: | 29 mOhms |
Rise Time: | 10 ns |
Series: | FDN339AN |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 18 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Вес, г | 0.03 |