2SC4102T106R, NPN 120V 50MA
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см. техническую документацию
см. техническую документацию
6000 шт., срок 8 недель
115 ֏
Кратность заказа 3000 шт.
от 6000 шт. —
110 ֏
3000 шт.
на сумму 345 000 ֏
Альтернативные предложения5
Описание
Semiconductors\Discrete Semiconductors
2SC4102 Series 120 V 50 mA NPN High Voltage Amplifier Transistor - SOT-323
Технические параметры
| Brand | ROHM Semiconductor |
| Collector- Base Voltage VCBO | 120 V |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Configuration | Single |
| Continuous Collector Current | 50 mA |
| DC Collector/Base Gain hfe Min | 180 |
| DC Current Gain hFE Max | 560 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 140 MHz |
| Height | 0.8 mm |
| Length | 2 mm |
| Manufacturer | ROHM Semiconductor |
| Maximum DC Collector Current | 0.05 A |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-323-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 0.3 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | 2SC4102 |
| Transistor Polarity | NPN |
| Width | 1.25 mm |
| Collector Current (Ic) | 50mA |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 120V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@10mA, 1mA |
| DC Current Gain (hFE@Ic,Vce) | 180@2mA, 6V |
| Operating Temperature | - |
| Power Dissipation (Pd) | 200mW |
| Transistor Type | NPN |
| Transition Frequency (fT) | 140MHz |
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | 50 mA |
| DC Collector/Base Gain hfe Min: | 180 |
| DC Current Gain hFE Max: | 560 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 140 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 50 mA |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
Техническая документация
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| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
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