US6M2TR, N+P 20V 1.5A/1A
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см. техническую документацию
см. техническую документацию
21000 шт., срок 8 недель
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Кратность заказа 3000 шт.
3000 шт.
на сумму 675 000 ֏
Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors
Массив Mosfet N и P-канал 30 В, 20 В, 1,5 А, 1 А, 1 Вт, поверхностный монтаж TUMT6
Технические параметры
| Base Product Number | *M2 -> |
| Current - Continuous Drain (Id) @ 25В°C | 1.5A, 1A |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| ECCN | EAR99 |
| FET Feature | Standard |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Other Related Documents | http://rohmfs.rohm.com/en/techdata_basic/transisto |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-SMD, Flat Leads |
| Power - Max | 1W |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.5A, 4.5V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Simulation Models | http://rohmfs.rohm.com/en/products/library/spice/d |
| Supplier Device Package | TUMT6 |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 6 ns, 10 ns |
| Id - Continuous Drain Current: | 1 A, 1.5 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOT-363-6 |
| Part # Aliases: | US6M2 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.6 nC, 2.1 nC |
| Rds On - Drain-Source Resistance: | 240 mOhms, 390 mOhms |
| Rise Time: | 9 ns, 8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel MOSFET, 1 P-Channel MOSFET |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 15 ns, 25 ns |
| Typical Turn-On Delay Time: | 7 ns, 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V, 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV, 500 mV |
Техническая документация
Datasheet US6M2TR
pdf, 61 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг