EM6K34T2CR, 0.9V Drive Nch MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
40000 шт., срок 8 недель
80 ֏
Кратность заказа 8000 шт.
от 16000 шт. —
75 ֏
от 24000 шт. —
71 ֏
от 32000 шт. —
67 ֏
8000 шт.
на сумму 640 000 ֏
Альтернативные предложения4
Описание
Semiconductors\Discrete Semiconductors
MOSFET, DUAL N-CH, 50V, SOT-563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:150mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:-; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
Технические параметры
| Brand | ROHM Semiconductor |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Factory Pack Quantity | 8000 |
| Fall Time | 43 ns, 43 ns |
| Height | 0.5 mm |
| Id - Continuous Drain Current | 200 mA, 200 mA |
| Length | 1.6 mm |
| Manufacturer | ROHM Semiconductor |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOT-563-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 150 mW |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 1.6 Ohms, 1.6 Ohms |
| Rise Time | 8 ns, 8 ns |
| RoHS | Details |
| Series | EM6K34 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-channel |
| Typical Turn-Off Delay Time | 17 ns, 17 ns |
| Typical Turn-On Delay Time | 5 ns, 5 ns |
| Unit Weight | 0.000289 oz |
| Vds - Drain-Source Breakdown Voltage | 50 V, 50 V |
| Vgs - Gate-Source Voltage | 8 V, 8 V |
| Vgs th - Gate-Source Threshold Voltage | 300 mV, 300 mV |
| Width | 1.2 mm |
| Continuous Drain Current (Id) | 200mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.2Ω@200mA, 4.5V |
| Drain Source Voltage (Vdss) | 50V |
| Gate Threshold Voltage (Vgs(th)@Id) | 800mV@1mA |
| Input Capacitance (Ciss@Vds) | 26pF@10V |
| Power Dissipation (Pd) | 120mW |
| Type | 2 N-Channel |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 8000 |
| Fall Time: | 43 ns |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOT-563-6 |
| Part # Aliases: | EM6K34 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 2.2 Ohms |
| Rise Time: | 8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel MOSFET |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet EM6K34T2CR
pdf, 1040 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг