IRF740SPBF, MOSFET N-Chan 400V 10 Amp

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1 410 ֏

Кратность заказа 50 шт.

от 100 шт. — 1 370 ֏

от 150 шт. — 1 330 ֏

от 250 шт. — 1 270 ֏

50 шт. на сумму 70 500 ֏

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Номенклатурный номер: 8025571668

Semiconductors\Discrete Semiconductors

Описание Транзистор МОП n-канальный 400В 10A 125Вт TO263 Характеристики

Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	800
Fall Time	24 ns
Height	4.83 mm
Id - Continuous Drain Current	10 A
Length	10.67 mm
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-263AB-3
Packaging	Reel
Pd - Power Dissipation	3.1 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	550 mOhms
Rise Time	27 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	14 ns
Unit Weight	0.050717 oz
Vds - Drain-Source Breakdown Voltage	400 V
Vgs - Gate-Source Voltage	20 V
Width	9.65 mm
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Resistance	550 mΩ
Maximum Drain Source Voltage	400 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	3.1 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	63 nC @ 10 V