RTR025N03TL, N-CH 30V 2.5A TSMT3
![RTR025N03TL, N-CH 30V 2.5A TSMT3](https://static.chipdip.ru/lib/506/DOC016506046.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
9000 шт., срок 8 недель
181 ֏
Кратность заказа 3000 шт.
от 6000 шт. —
168 ֏
от 9000 шт. —
163 ֏
3000 шт.
на сумму 543 000 ֏
Альтернативные предложения3
Описание
Semiconductors\Discrete Semiconductors
30V 2.5A 92m-@4.5V,2.5A 1W 1.5V@1mA N Channel TSMT-3 MOSFETs
Технические параметры
Brand | ROHM Semiconductor |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 10 ns |
Height | 0.85 mm |
Id - Continuous Drain Current | 2.5 A |
Length | 2.9 mm |
Manufacturer | ROHM Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Reel |
Pd - Power Dissipation | 1 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 950 mOhms |
Rise Time | 15 ns |
RoHS | Details |
Series | RTR025N03 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 9 ns |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 12 V |
Width | 1.6 mm |
Brand: | ROHM Semiconductor |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 10 ns |
Id - Continuous Drain Current: | 2.5 A |
Manufacturer: | ROHM Semiconductor |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-346T-3 |
Part # Aliases: | RTR025N03 |
Pd - Power Dissipation: | 1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 3.3 nC |
Rds On - Drain-Source Resistance: | 950 mOhms |
Rise Time: | 15 ns |
Series: | RTR025N03 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 9 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг