DMTH6010LPSQ-13, 60V 8mOhm@10V,20A N Channel PowerDI5060-8 MOSFETs
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2 420 ֏
от 10 шт. —
1 590 ֏
от 30 шт. —
1 370 ֏
1 шт.
на сумму 2 420 ֏
Описание
DMTH601xLPSQ N-Channel Enhancement Mode MOSFETs
Diodes Inc. DMTH601xLPSQ 60V N-Channel Enhancement Mode MOSFETs are designed to meet the stringent requirements of automotive applications. DMTH601xLPSQ MOSFETs are qualified to AEC-Q101, supported by a PPAP (Production Part Approval Process), and are ideal for use in engine management systems, body control electronics, and DC-DC converters. DMTH601xLPSQ MOSFETs offer low R DS(ON), low input capacitance, and fast switching speed. Offered in Diodes Incorporated's unique PowerDI ® 5060 package, DMTH601xLPSQ MOSFETs are rated to +175 C and feature an off-board height of <1.1mm. This makes DMTH601xLPSQ MOSFETs well suited for high-temperature environments and low-profile applications.
Diodes Inc. DMTH601xLPSQ 60V N-Channel Enhancement Mode MOSFETs are designed to meet the stringent requirements of automotive applications. DMTH601xLPSQ MOSFETs are qualified to AEC-Q101, supported by a PPAP (Production Part Approval Process), and are ideal for use in engine management systems, body control electronics, and DC-DC converters. DMTH601xLPSQ MOSFETs offer low R DS(ON), low input capacitance, and fast switching speed. Offered in Diodes Incorporated's unique PowerDI ® 5060 package, DMTH601xLPSQ MOSFETs are rated to +175 C and feature an off-board height of <1.1mm. This makes DMTH601xLPSQ MOSFETs well suited for high-temperature environments and low-profile applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 9.7 ns |
| Id - Continuous Drain Current: | 13.5 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerDI5060-8 |
| Pd - Power Dissipation: | 136 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 41.3 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 6.4 mOhms |
| Rise Time: | 4.3 ns |
| Series: | DMTH6010 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 23.4 ns |
| Typical Turn-On Delay Time: | 5.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 13.5 |
| Maximum Drain Source Resistance (mOhm) | 8@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 2600 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | Yes |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI 5060 |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 9.7 |
| Typical Gate Charge @ 10V (nC) | 41.3 |
| Typical Gate Charge @ Vgs (nC) | 41.3@10V|19.3@4.5V |
| Typical Input Capacitance @ Vds (pF) | 2090@30V |
| Typical Rise Time (ns) | 4.3 |
| Typical Turn-Off Delay Time (ns) | 23.4 |
| Typical Turn-On Delay Time (ns) | 5.7 |
| Вес, г | 0.12 |
Техническая документация
Datasheet
pdf, 457 КБ
Datasheet DMTH6010LPSQ-13
pdf, 536 КБ