MMBTA05Q-13-F, 60V 310mW 100@100mA,1V 500mA NPN TO-236-3 BIpolar TransIstors - BJT
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71 ֏
Кратность заказа 10 шт.
от 100 шт. —
53 ֏
10 шт.
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Описание
Automotive Bipolar Junction Transistors (BJT)
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Технические параметры
Collector Emitter Voltage Max | 60В |
Continuous Collector Current | 500мА |
DC Current Gain hFE Min | 100hFE |
DC Усиление Тока hFE | 100hFE |
Power Dissipation | 350мВт |
Квалификация | AEC-Q101 |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | - |
Максимальная Рабочая Температура | 150°C |
Монтаж транзистора | Surface Mount |
Полярность Транзистора | NPN |
Стиль Корпуса Транзистора | SOT-23 |
Частота Перехода ft | 100МГц |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 60 V |
Collector- Emitter Voltage VCEO Max: | 60 V |
Collector-Emitter Saturation Voltage: | 250 mV |
Configuration: | Single |
Continuous Collector Current: | 500 mA |
DC Collector/Base Gain hfe Min: | 100 |
Emitter- Base Voltage VEBO: | 4 V |
Factory Pack Quantity: Factory Pack Quantity: | 10000 |
Gain Bandwidth Product fT: | 100 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 310 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Qualification: | AEC-Q101 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Automotive | Yes |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Collector Base Voltage (V) | 60 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.25@10mA@100mA |
Maximum Collector-Emitter Voltage (V) | 60 |
Maximum DC Collector Current (A) | 0.5 |
Maximum Emitter Base Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 350 |
Maximum Transition Frequency (MHz) | 100(Min) |
Minimum DC Current Gain | 100@10mA@1V|100@100mA@1V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | Yes |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Type | NPN |
Вес, г | 0.03 |