RD3H045SPFRATL, TO-252-3 MOSFETs

RD3H045SPFRATL, TO-252-3 MOSFETs
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2410 шт., срок 5-6 недель
750 ֏
от 10 шт.530 ֏
от 30 шт.462 ֏
от 100 шт.404 ֏
1 шт. на сумму 750 ֏
Номенклатурный номер: 8026302756
Бренд: Rohm

Описание

AEC-Q101 Automotive MOSFETs ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100VDSS to 100VDSS. These MOSFETs offer a drain-current ranging from -25A to 40A and RDS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.

Технические параметры

Brand: ROHM Semiconductor
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2500
Fall Time: 8 ns
Forward Transconductance - Min: 3 S
Id - Continuous Drain Current: 4.5 A
Manufacturer: ROHM Semiconductor
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: DPAK-3(TO-252-3)
Part # Aliases: RD3H045SPFRA
Pd - Power Dissipation: 15 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 12 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 155 mOhms
Rise Time: 8 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 8 ns
Vds - Drain-Source Breakdown Voltage: 45 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Вес, г 0.38

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