RSR025P03HZGTL, 30V 2.5A 98mOhm@2.5A,10V 700mW P Channel TSMT-3 MOSFETs
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см. техническую документацию
см. техническую документацию
33 шт., срок 5-6 недель
1 280 ֏
от 10 шт. —
880 ֏
от 30 шт. —
810 ֏
1 шт.
на сумму 1 280 ֏
Альтернативные предложения1
Описание
AEC-Q101 Automotive MOSFETs ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100VDSS to 100VDSS. These MOSFETs offer a drain-current ranging from -25A to 40A and RDS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.
Технические параметры
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 1.6 ns |
| Forward Transconductance - Min: | 1.6 S |
| Id - Continuous Drain Current: | 2.5 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SC-96-3 |
| Part # Aliases: | RSR025P03HZG |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.4 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 98 mOhms |
| Rise Time: | 10 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 42 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Voltage | 30 V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-346T |
| Pin Count | 3 |
| Transistor Material | Si |
| Вес, г | 0.14 |
Техническая документация
Datasheet
pdf, 1468 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 25 августа1 | бесплатно |
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