SCT2H12NYTB, N-Ch 1700V 4A 44W SiC Silicon Carbide
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см. техническую документацию
см. техническую документацию
2400 шт., срок 8 недель
3 880 ֏
Кратность заказа 800 шт.
800 шт.
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Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors
MOSFET, N-CH, 1.7KV, 4A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1.15ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:44W; Transistor Case Style:TO-268; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
Технические параметры
| Brand | ROHM Semiconductor |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 400 |
| Fall Time | 74 ns |
| Forward Transconductance - Min | 400 mS |
| Id - Continuous Drain Current | 4 A |
| Manufacturer | ROHM Semiconductor |
| Maximum Operating Temperature | +175 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-268-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 44 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 1.15 Ohms |
| Rise Time | 21 ns |
| RoHS | Details |
| Technology | SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 16 ns |
| Vds - Drain-Source Breakdown Voltage | 1.7 kV |
| Vgs - Gate-Source Voltage | -6 V to 22 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 800 |
| Fall Time: | 74 ns |
| Forward Transconductance - Min: | 400 mS |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-268-3 |
| Part # Aliases: | SCT2H12NY |
| Pd - Power Dissipation: | 44 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Rds On - Drain-Source Resistance: | 1.15 Ohms |
| Rise Time: | 21 ns |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.7 kV |
| Vgs - Gate-Source Voltage: | -6 V, +22 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
Техническая документация
Документация
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