FDC5612, MOSFET N-CH 60V 4.3A SUPERSOT6
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см. техническую документацию
см. техническую документацию
374 ֏
Мин. кол-во для заказа 3 шт.
от 10 шт. —
304 ֏
от 100 шт. —
238 ֏
от 500 шт. —
189 ֏
3 шт.
на сумму 1 122 ֏
Описание
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 4.3 A |
| Maximum Drain Source Resistance | 64 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.6 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 6 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 12.5 nC @ 10 V |
| Width | 1.7mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 14 S |
| Id - Continuous Drain Current: | 4.3 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC5612_NL |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 18 nC |
| Rds On - Drain-Source Resistance: | 55 mOhms |
| Rise Time: | 8 ns |
| Series: | FDC5612 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |