2N7000-D75Z, Транзистор: N-MOSFET
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660 ֏
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344 ֏
от 25 шт. —
260 ֏
от 100 шт. —
194 ֏
1 шт.
на сумму 660 ֏
Описание
Cloud Power Management Solutions
onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
Технические параметры
Case | TO92 |
Drain current | 0.2A |
Drain-source voltage | 60V |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Kind of package | reel, tape |
Manufacturer | ONSEMI |
Mounting | THT |
On-state resistance | 9Ω |
Polarisation | unipolar |
Power dissipation | 0.4W |
Pulsed drain current | 0.5A |
Technology | DMOS |
Type of transistor | N-MOSFET |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Forward Transconductance - Min: | 0.1 S |
Id - Continuous Drain Current: | 200 mA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-92-3 |
Packaging: | Ammo Pack |
Part # Aliases: | 2N7000_D75Z |
Pd - Power Dissipation: | 400 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Rds On - Drain-Source Resistance: | 1.2 Ohms |
Series: | 2N7000 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 285 КБ