FCH023N65S3L4, Транзистор: N-MOSFET
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Описание
SuperFET® III MOSFETs
onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.
onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.
Технические параметры
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Id - Continuous Drain Current: | 75 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-4 |
Packaging: | Tube |
Pd - Power Dissipation: | 595 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 222 nC |
Rds On - Drain-Source Resistance: | 23 mOhms |
Series: | FCH023N65S3L4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperFET III |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Вес, г | 3 |
Техническая документация
Datasheet
pdf, 523 КБ