FDMC86570L, Транзистор: N-MOSFET
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см. техническую документацию
см. техническую документацию
3 790 ֏
1 шт.
на сумму 3 790 ֏
Описание
60V 18A 4.3mΩ@10V,18A 2.3W 3V@250uA N Channel Power(3x3) MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.3mΩ@10V, 18A |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Power Dissipation (Pd) | 2.3W |
| Type | N Channel |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 75 S |
| Id - Continuous Drain Current: | 56 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | Power-33-8 |
| Pd - Power Dissipation: | 54 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 88 nC |
| Rds On - Drain-Source Resistance: | 6.5 mOhms |
| Rise Time: | 12 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 61 ns |
| Typical Turn-On Delay Time: | 34 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 326 КБ
Datasheet FDMC86570L
pdf, 325 КБ