DMN3008SFG-7, Транзистор: N-MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
660 ֏
от 10 шт. —
396 ֏
от 30 шт. —
330 ֏
от 100 шт. —
269 ֏
1 шт.
на сумму 660 ֏
Описание
30V 17.6A 4.6mΩ@10V,13.5A 900mW 2.3V@250uA N Channel PowerDI3333-8 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 17.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.6mΩ@10V, 13.5A |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.3V@250uA |
| Input Capacitance (Ciss@Vds) | 3.69nF@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 900mW |
| Total Gate Charge (Qg@Vgs) | 86nC@10V |
| Type | N Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2000 |
| Fall Time: | 28.4 ns |
| Id - Continuous Drain Current: | 17.6 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerDI3333-8 |
| Pd - Power Dissipation: | 2.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Rds On - Drain-Source Resistance: | 4.6 mOhms |
| Rise Time: | 14 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 63.7 ns |
| Typical Turn-On Delay Time: | 5.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 512 КБ