FDS5351, Транзистор N-MOSFET, полевой, 60В, 6,1А, 5Вт, SO8, PowerTrench®
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см. техническую документацию
см. техническую документацию
880 ֏
от 10 шт. —
530 ֏
от 30 шт. —
423 ֏
от 100 шт. —
359 ֏
1 шт.
на сумму 880 ֏
Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 6.1 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Drain Source Resistance (mOhm) | 35@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 125 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 5000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | PowerTrench |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Typical Diode Forward Voltage (V) | 0.82 |
| Typical Fall Time (ns) | 2 |
| Typical Gate Charge @ 10V (nC) | 19 |
| Typical Gate Charge @ Vgs (nC) | 19@10V|9@4.5V |
| Typical Gate Plateau Voltage (V) | 3 |
| Typical Gate Threshold Voltage (V) | 2 |
| Typical Gate to Drain Charge (nC) | 3.5 |
| Typical Gate to Source Charge (nC) | 3 |
| Typical Input Capacitance @ Vds (pF) | 985@30V |
| Typical Output Capacitance (pF) | 90 |
| Typical Reverse Recovery Charge (nC) | 15 |
| Typical Reverse Recovery Time (ns) | 24 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 50@30V |
| Typical Rise Time (ns) | 3 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Typical Turn-On Delay Time (ns) | 8 |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 6.1 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Rds On - Drain-Source Resistance: | 26.5 mOhms |
| Rise Time: | 3 ns |
| Series: | FDS5351 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Forward Diode Voltage | 1.3V |
| Maximum Continuous Drain Current | 6.1 A |
| Maximum Drain Source Resistance | 58.8 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 5 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOIC |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Width | 3.9mm |
| Вес, г | 0.13 |