IXFA72N30X3
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см. техническую документацию
см. техническую документацию
9 100 ֏
Кратность заказа 50 шт.
от 100 шт. —
7 400 ֏
от 500 шт. —
7 300 ֏
50 шт.
на сумму 455 000 ֏
Описание
Semiconductors\Discrete Semiconductors
Описание Транзистор N-MOSFET, X3-Class, 300В, 72А, 390Вт, TO263, 100с
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 50 |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 36 S |
| Id - Continuous Drain Current: | 72 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-263-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 390 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 82 nC |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Rise Time: | 25 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 86 ns |
| Typical Turn-On Delay Time: | 22 ns |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Техническая документация
Datasheet
pdf, 195 КБ