FDN336P, Транзистор P-MOSFET, полевой, -20В, -1,3А, 500мВт, SuperSOT-3
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286 ֏
от 10 шт. —
234 ֏
от 30 шт. —
203 ֏
от 100 шт. —
170 ֏
1 шт.
на сумму 286 ֏
Описание
Описание Транзистор P-MOSFET, полевой, -20В, -1,3А, 500мВт, SuperSOT-3 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | SuperSOT-3 |
| Drain current | -1.3A |
| Drain-source voltage | -20V |
| Features of semiconductor devices | logic level |
| Gate charge | 5nC |
| Gate-source voltage | ±8V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 0.32Ω |
| Polarisation | unipolar |
| Power dissipation | 0.5W |
| Technology | PowerTrench® |
| Type of transistor | P-MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 4 S |
| Id - Continuous Drain Current: | 1.3 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SSOT-3 |
| Part # Aliases: | FDN336P_NL |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 5 nC |
| Rds On - Drain-Source Resistance: | 200 mOhms |
| Rise Time: | 12 ns |
| Series: | FDN336P |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 16 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 0.02 |