FDG1024NZ, Транзистор N-MOSFET x2, полевой, 20В, 1,2А, 0,36Вт, SC70-6
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см. техническую документацию
620 ֏
от 10 шт. —
484 ֏
от 30 шт. —
401 ֏
1 шт.
на сумму 620 ֏
Описание
MOSFET, DUAL N CH, 20V, 1.2A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:360mW; Transistor Case Style:SC-70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 1.2A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel(Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 300mW |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 1.2A, 4.5V |
| Series | PowerTrenchВ® |
| Supplier Device Package | SC-88(SC-70-6) |
| Vgs(th) (Max) @ Id | 1V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 1.2 A |
| Maximum Drain Source Resistance | 259 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 300 mW, 360 mW |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 2 |
| Package Type | SOT-363 |
| Pin Count | 6 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.8 nC @ 4.5 V |
| Width | 1.25mm |
| Вес, г | 0.02 |