FDPF8N50NZ
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см. техническую документацию
см. техническую документацию
5 500 ֏
от 2 шт. —
4 800 ֏
от 5 шт. —
4 380 ֏
от 6 шт. —
4 230 ֏
1 шт.
на сумму 5 500 ֏
Описание
Электроэлемент
Power Field-Effect Transistor, 8A, 500V, 0.85ohm, N-Channel, MOSFET, TO-220AB
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Forward Transconductance - Min | 6.3 S |
| Height | 16.07 mm |
| Id - Continuous Drain Current | 8 A |
| Length | 10.36 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220FP-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 40.3 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 770 mOhms |
| RoHS | Details |
| Series | FDPF8N50NZ |
| Technology | Si |
| Tradename | UniFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Unit Weight | 0.080072 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 4.9 mm |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Drain Source Resistance (mOhm) | 850@10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 40300 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Obsolete |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | UniFET II |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| Tab | Tab |
| Typical Fall Time (ns) | 27 |
| Typical Gate Charge @ 10V (nC) | 14 |
| Typical Gate Charge @ Vgs (nC) | 14@10V |
| Typical Input Capacitance @ Vds (pF) | 565@25V |
| Typical Rise Time (ns) | 34 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Typical Turn-On Delay Time (ns) | 17 |
| Вес, г | 4.75 |
Техническая документация
Datasheet
pdf, 1001 КБ