BCP5616Q
530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
295 ֏
от 10 шт. —
247 ֏
от 100 шт. —
196 ֏
2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Технические параметры
| Current - Collector (Ic) (Max) | 1A |
| Current - Collector Cutoff (Max) | 100nA(ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 150MHz |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Operating Temperature | -65В°C ~ 150В°C(TJ) |
| Package / Case | TO-261-4, TO-261AA |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power - Max | 2W |
| Series | - |
| Supplier Device Package | SOT-223 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Вес, г | 0.222 |
Техническая документация
Datasheet
pdf, 424 КБ