FDMT80040DC, Транзистор: N-MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
7 900 ֏
от 10 шт. —
6 400 ֏
от 30 шт. —
5 800 ֏
1 шт.
на сумму 7 900 ֏
Описание
40V 420A 0.44mΩ@10V,64A 156W 2.7V@250mA N Channel DualCool-88-8 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 420A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.44mΩ@10V, 64A |
| Drain Source Voltage (Vdss) | 40V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.7V@250mA |
| Input Capacitance (Ciss@Vds) | 18.65nF@20V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF@20V |
| Total Gate Charge (Qg@Vgs) | 149nC@0~6V |
| Type | N Channel |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 43 ns |
| Id - Continuous Drain Current: | 420 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DualCool-88-8 |
| Pd - Power Dissipation: | 156 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 241 nC |
| Rds On - Drain-Source Resistance: | 440 uOhms |
| Rise Time: | 62 ns |
| Series: | FDMT80040DC |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | N-channel |
| Typical Turn-Off Delay Time: | 101 ns |
| Typical Turn-On Delay Time: | 63 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Вес, г | 0.01 |