ZXTP2029FTA, Биполярные транзисторы
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см. техническую документацию
см. техническую документацию
361 ֏
Мин. кол-во для заказа 20 шт.
20 шт.
на сумму 7 220 ֏
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 130 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 135 mV |
| Configuration: | Single |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 150 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.56 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZXTP2029 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | 130 V |
| Maximum Collector Emitter Voltage | -100 V |
| Maximum DC Collector Current | -3 A |
| Maximum Emitter Base Voltage | 7 V |
| Maximum Operating Frequency | 150 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.56 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Case | SOT23 |
| Collector current | 3A |
| Collector-emitter voltage | 100V |
| Current gain | 40…300 |
| Frequency | 150MHz |
| Kind of package | reel, tape |
| Manufacturer | DIODES INCORPORATED |
| Mounting | SMD |
| Polarisation | bipolar |
| Power dissipation | 1.2W |
| Pulsed collector current | 5A |
| Type of transistor | PNP |
| Collector Current (Ic) | 3A |
| Collector Cut-Off Current (Icbo) | 20nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 180mV@4A, 400mA |
| DC Current Gain (hFE@Ic,Vce) | 100@1A, 2V |
| Power Dissipation (Pd) | 1.2W |
| Transition Frequency (fT) | 150MHz |