FCH023N65S3-F155, Транзистор: N-MOSFET; 600В; 65,8А; 595Вт; TO247
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
12 800 ֏
1 шт.
на сумму 12 800 ֏
Описание
TO-247-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 75 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FCH023N65S3_F155 |
| Pd - Power Dissipation: | 595 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 222 nC |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| REACH - SVHC: | Details |
| Series: | FCH023N65S3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET III |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 5 |