ZVP4424ASTZ
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см. техническую документацию
см. техническую документацию
1 410 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
1 190 ֏
от 10 шт. —
1 090 ֏
2 шт.
на сумму 2 820 ֏
Описание
Электроэлемент
Mosfet, P-Ch, 240V, 0.2A, To-92 Rohs Compliant: Yes |Diodes Inc. ZVP4424ASTZ
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2000 |
| Fall Time | 8 ns |
| Height | 4.01 mm |
| Id - Continuous Drain Current | -200 mA |
| Length | 4.77 mm |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 750 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 9 Ohms |
| Rise Time | 8 ns |
| RoHS | Details |
| Series | ZVP4424 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | FET |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | -240 V |
| Vgs - Gate-Source Voltage | 40 V |
| Vgs th - Gate-Source Threshold Voltage | -2 V |
| Width | 2.41 mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 750 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 9 Ohms |
| Rise Time: | 8 ns |
| Series: | ZVP4424 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 26 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 240 V |
| Vgs - Gate-Source Voltage: | -40 V, +40 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.2461 |
Техническая документация
Datasheet
pdf, 113 КБ