DMN66D0LT-7, Транзистор N-MOSFET, полевой, 60В, 0,115А, 0,2Вт, SOT523
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см. техническую документацию
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Описание
60V 115mA 200mW 5Ω@10V,115mA 2V@250uA N Channel SOT-523 MOSFETs ROHS
Технические параметры
Continuous Drain Current (Id) | 115mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5Ω@10V, 115mA |
Drain Source Voltage (Vdss) | 60V |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Input Capacitance (Ciss@Vds) | 23pF@25V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 200mW |
Type | N Channel |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Id - Continuous Drain Current: | 115 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-523-3 |
Pd - Power Dissipation: | 200 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 6 Ohms |
Series: | DMN66 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 33 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 337 КБ
Datasheet DMN66D0LT-7
pdf, 182 КБ