FDS89161LZ, Транзистор: N-MOSFET; полевой; 100В; 2,7А; 31Вт; SO8

Фото 1/2 FDS89161LZ, Транзистор: N-MOSFET; полевой; 100В; 2,7А; 31Вт; SO8
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2 070 ֏
от 10 шт.1 410 ֏
1 шт. на сумму 2 070 ֏
Номенклатурный номер: 8030488938

Описание

100V 2.7A 105mΩ@10V,2.7A 1.6W 2.2V@250uA N Channel SOIC-8 MOSFETs ROHS

Технические параметры

Drain Source On Resistance (RDS(on)@Vgs,Id) -
Drain Source Voltage (Vdss) 100V
Type N Channel
Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 10 ns
Forward Transconductance - Min: 7.8 s
Id - Continuous Drain Current: 2.7 A
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package / Case: SOIC-8
Pd - Power Dissipation: 31 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 5.3 nC
Rds On - Drain-Source Resistance: 105 mOhms
Rise Time: 10 ns
Series: FDS89161LZ
Subcategory: MOSFETs
Technology: Si
Tradename: PowerTrench
Transistor Polarity: N-Channel
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 10 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.7 V
Current - Continuous Drain (Id) @ 25В°C 2.7A
Drain to Source Voltage (Vdss) 100V
FET Feature Standard
FET Type 2 N-Channel(Dual)
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 302pF @ 50V
Manufacturer ON Semiconductor
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C(TJ)
Package / Case 8-SOIC(0.154", 3.90mm Width)
Packaging Cut Tape(CT)
Part Status Active
Power - Max 1.6W
Rds On (Max) @ Id, Vgs 105mOhm @ 2.7A, 10V
Series PowerTrenchВ®
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 2.2V @ 250ВµA
Вес, г 0.1

Техническая документация

Datasheet
pdf, 394 КБ
Datasheet
pdf, 393 КБ
Datasheet
pdf, 395 КБ