DMP6110SVTQ-7, Транзистор P-MOSFET, полевой, -60В, -6,5А, 1,2Вт, TSOT26
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см. техническую документацию
см. техническую документацию
484 ֏
Кратность заказа 5 шт.
от 50 шт. —
304 ֏
от 150 шт. —
260 ֏
от 500 шт. —
187 ֏
5 шт.
на сумму 2 420 ֏
Описание
60V 7.3A 105mΩ@4.5A,10V 1.8W 3V@250uA P Channel TSOT-23-6 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 7.3A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 105mΩ@4.5A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 969pF@30V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 1.8W |
| Total Gate Charge (Qg@Vgs) | 17.2nC@10V |
| Type | P Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 42 ns |
| Id - Continuous Drain Current: | 7.3 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TSOT-26-6 |
| Pd - Power Dissipation: | 1.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17.2 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 105 mOhms |
| Rise Time: | 23 ns |
| Series: | DMP6110 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 34 ns |
| Typical Turn-On Delay Time: | 4.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 433 КБ