FDMS86252L, Транзистор: N-MOSFET; полевой; 150В; 12А; 50Вт; PQFN8
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2 600 ֏
от 10 шт. —
1 900 ֏
от 100 шт. —
1 300 ֏
от 250 шт. —
1 180 ֏
1 шт.
на сумму 2 600 ֏
Описание
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 4.4A(Ta) |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1335pF @ 75V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 2.5W(Ta), 50W(Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 4.4A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | 8-PQFN(5x6) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 110 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | PQFN8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Width | 5.85mm |
| Вес, г | 0.1 |