NTD25P03LG
750 ֏
от 2 шт. —
440 ֏
от 10 шт. —
198 ֏
1 шт.
на сумму 750 ֏
Описание
Электроэлемент
MOSFET, P CH, 30V, 25A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-25A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:75W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 16 ns |
| Forward Transconductance - Min | 13 S |
| Height | 2.38 mm |
| Id - Continuous Drain Current | -25 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 75 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 51 mOhms |
| Rise Time | 37 ns |
| RoHS | Details |
| Series | NTD25P03L |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 9 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | 15 V |
| Width | 6.22 mm |
Техническая документация
Документация
pdf, 191 КБ
2008191935_VBsemi-Elec-NTD25P03LG-VB_C725129 (2)
pdf, 769 КБ