FDMC2523P
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см. техническую документацию
см. техническую документацию
1 540 ֏
от 2 шт. —
1 320 ֏
от 10 шт. —
1 080 ֏
1 шт.
на сумму 1 540 ֏
Описание
Электроэлемент
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 1.8 A |
| Maximum Drain Source Resistance | 3.6 Ω |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 42 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | MLP8 |
| Pin Count | 8 |
| Series | QFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
| Width | 3mm |