DN1509N8-G, Транзистор МОП n-канальный, 90В, 300мА, 1,6Вт, SOT89-3
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Описание
Trans MOSFET N-CH Si 90V 0.36A 4-Pin(3+Tab) SOT-89 T/R
Технические параметры
| Automotive | No |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Material | Si |
| Maximum Continuous Drain Current (A) | 0.36 |
| Maximum Drain Source Resistance (mOhm) | 6000@0V |
| Maximum Drain Source Voltage (V) | 90 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum IDSS (uA) | 540000(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1600 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 4 |
| PPAP | No |
| Process Technology | DMOS |
| Product Category | Power MOSFET |
| Supplier Package | SOT-89 |
| Tab | Tab |
| Typical Fall Time (ns) | 25 |
| Typical Input Capacitance @ Vds (pF) | 70@25V |
| Typical Rise Time (ns) | 16 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Typical Turn-On Delay Time (ns) | 12 |
| Вес, г | 0.09 |
Техническая документация
Datasheet
pdf, 615 КБ