DMN5L06KQ-7, Транзистор: N-MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
137 ֏
Кратность заказа 5 шт.
от 50 шт. —
88 ֏
от 150 шт. —
75 ֏
от 500 шт. —
65 ֏
5 шт.
на сумму 685 ֏
Описание
50V 300mA 2Ω@50mA,5V 350mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 300mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2Ω@50mA, 5V |
| Drain Source Voltage (Vdss) | 50V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Input Capacitance (Ciss@Vds) | 50pF@25V |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | 1PCSNChannel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 200 mS |
| Id - Continuous Drain Current: | 300 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 2 Ohms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 441 КБ