FDP18N50, Транзистор униполярный,МОП n-канальный, 500В, 18А, 235Вт, TO220
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3 260 ֏
от 10 шт. —
2 250 ֏
от 50 шт. —
1 950 ֏
от 100 шт. —
1 740 ֏
1 шт.
на сумму 3 260 ֏
Описание
500V 18A 235W 265mΩ@10V,9A 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
Технические параметры
Continuous Drain Current (Id) | 20A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 190mΩ@10V |
Drain Source Voltage (Vdss) | 650V |
Type | 1PCSNChannel |
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 90 ns |
Forward Transconductance - Min | 25 S |
Height | 16.3 mm |
Id - Continuous Drain Current | 8 A |
Length | 10.67 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 38.5 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 265 mOhms |
Rise Time | 165 ns |
RoHS | Details |
Series | FDP18N50 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 95 ns |
Typical Turn-On Delay Time | 55 ns |
Unit Weight | 0.063493 oz |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 4.7 mm |
Case | TO220AB |
Drain current | 10.8A |
Drain-source voltage | 500V |
Gate charge | 60nC |
Gate-source voltage | ±30V |
Kind of channel | enhanced |
Kind of package | tube |
Mounting | THT |
On-state resistance | 265mΩ |
Polarisation | unipolar |
Power dissipation | 235W |
Type of transistor | N-MOSFET |
Maximum Power Dissipation | 235 W |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 1000 |
Fall Time: | 90 ns |
Forward Transconductance - Min: | 25 S |
Id - Continuous Drain Current: | 18 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 38.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 60 nC |
Rds On - Drain-Source Resistance: | 265 mOhms |
Rise Time: | 165 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | Power MOSFET |
Typical Turn-Off Delay Time: | 95 ns |
Typical Turn-On Delay Time: | 55 ns |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 2.05 |