FDY302NZ, Транзистор: N-MOSFET, полевой, 20В, 0,6А, 0,625Вт, SC89
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
203 ֏
Кратность заказа 5 шт.
от 50 шт. —
141 ֏
5 шт.
на сумму 1 015 ֏
Альтернативные предложения1
Описание
20V 600mA 240mΩ@4.5V,600mA 625mW 1.5V@250uA 1PCSNChannel SC-89-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 850mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 270mΩ@4.5V |
| Drain Source Voltage (Vdss) | 20V |
| Type | 1PCSNChannel |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 2.4 ns |
| Forward Transconductance - Min: | 1.8 S |
| Id - Continuous Drain Current: | 600 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-523-3 |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET |
| Qg - Gate Charge: | 800 pC |
| Rds On - Drain-Source Resistance: | 300 mOhms |
| Rise Time: | 8 ns |
| Series: | FDY302NZ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Flat |
| Maximum Continuous Drain Current (A) | 0.6 |
| Maximum Drain Source Resistance (mOhm) | 300@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 625 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-523FL |
| Typical Fall Time (ns) | 2.4 |
| Typical Gate Charge @ Vgs (nC) | 0.8@4.5V |
| Typical Input Capacitance @ Vds (pF) | 60@10V |
| Typical Rise Time (ns) | 8 |
| Typical Turn-Off Delay Time (ns) | 8 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Continuous Drain Current | 600 mA |
| Maximum Drain Source Resistance | 1.2 Ω |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 625 mW |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-523(SC-89) |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 0.8 nC @ 4.5 V |
| Width | 0.98mm |
| Вес, г | 0.1 |