BS107PSTZ, Транзистор: N-MOSFET, полевой, 200В, 0,12А, 0,5Вт, TO92
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750 ֏
от 10 шт. —
580 ֏
1 шт.
на сумму 750 ֏
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 120mA(Ta) |
Drain to Source Voltage (Vdss) | 200V |
Drive Voltage (Max Rds On, Min Rds On) | 2.6V, 5V |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 25V |
Manufacturer | Diodes Incorporated |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | E-Line-3 |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 500mW(Ta) |
Rds On (Max) @ Id, Vgs | 30 Ohm @ 100mA, 5V |
Series | Automotive, AEC-Q101 |
Supplier Device Package | E-Line(TO-92 compatible) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | - |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Id - Continuous Drain Current: | 120 mA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-92-3 |
Packaging: | Ammo Pack |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Rds On - Drain-Source Resistance: | 15 Ohms |
Series: | BS107 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | FET |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Case | TO92 |
Drain current | 0.12A |
Drain-source voltage | 200V |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Kind of package | Ammo Pack |
Mounting | THT |
On-state resistance | 23Ω |
Polarisation | unipolar |
Power dissipation | 0.5W |
Type of transistor | N-MOSFET |
Вес, г | 0.5 |