2N5551G
132 ֏
Мин. кол-во для заказа 10 шт.
от 50 шт. —
80 ֏
от 100 шт. —
62 ֏
от 1000 шт. —
55 ֏
10 шт.
на сумму 1 320 ֏
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Описание
TRANSISTOR, NPN, 160V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:150MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:TO-92; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Continuous Collector Current Ic Max:600mA; Current Ic Continuous a Max:600mA; Current Ic hFE:10mA; Device Marking:2N5551; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:b; Power Dissipation Ptot Max:350mW; Voltage Vcbo:180V
Технические параметры
| Category | Bipolar Small Signal |
| Collector Current (DC) | 0.6(A) |
| Collector Current (DC) (Max) | 0.6 A |
| Collector-Base Voltage | 180(V) |
| Collector-Emitter Voltage | 160(V) |
| Configuration | Single |
| DC Current Gain | 80 |
| DC Current Gain (Min) | 80 |
| Emitter-Base Voltage | 6(V) |
| Frequency | 300(MHz) |
| Frequency (Max) | 300 MHz |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Package Type | TO-92 |
| Packaging | Box |
| Pin Count | 3 |
| Power Dissipation | 0.625(W) |
| Rad Hardened | No |
| Transistor Polarity | NPN |