ZTX694BSTZ
![ZTX694BSTZ](https://static.chipdip.ru/lib/514/DOC006514956.jpg)
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см. техническую документацию
см. техническую документацию
1 760 ֏
от 2 шт. —
1 540 ֏
от 10 шт. —
1 290 ֏
1 шт.
на сумму 1 760 ֏
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 120 V |
Collector- Emitter Voltage VCEO Max: | 120 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
Continuous Collector Current: | 500 mA |
DC Current Gain hFE Max: | 500 at 100 mA, 2 V |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Gain Bandwidth Product fT: | 130 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Ammo Pack |
Pd - Power Dissipation: | 1 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZTX694 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Техническая документация
Datasheet
pdf, 69 КБ