FDMC86102LZ
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см. техническую документацию
см. техническую документацию
2 640 ֏
от 2 шт. —
2 340 ֏
от 10 шт. —
2 070 ֏
1 шт.
на сумму 2 640 ֏
Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Resistance | 40 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 41 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | Power 33 |
| Pin Count | 8 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 15.3 nC @ 10 V, 7.6 nC @ 4.5 V |
| Width | 3.3mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 2.5 ns |
| Forward Transconductance - Min: | 24 S |
| Id - Continuous Drain Current: | 7 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-33-8 |
| Pd - Power Dissipation: | 41 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15.3 nC |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Rise Time: | 2.3 ns |
| Series: | FDMC86102LZ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 7.1 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |